- Home
- Search Results
- Page 1 of 1
Search for: All records
-
Total Resources2
- Resource Type
-
00020
- Availability
-
20
- Author / Contributor
- Filter by Author / Creator
-
-
Andrieiev, O. (2)
-
Bockowski, M. (2)
-
Demchenko, D. O. (2)
-
McEwen, B. (2)
-
Reshchikov, M. A. (2)
-
Shahedipour-Sandvik, F. (2)
-
Sierakowski, K. (2)
-
Vorobiov, M. (2)
-
Jaroszynski, P. (1)
-
Meyers, V. (1)
-
Ye, D. (1)
-
#Tyler Phillips, Kenneth E. (0)
-
#Willis, Ciara (0)
-
& Abreu-Ramos, E. D. (0)
-
& Abramson, C. I. (0)
-
& Abreu-Ramos, E. D. (0)
-
& Adams, S.G. (0)
-
& Ahmed, K. (0)
-
& Ahmed, Khadija. (0)
-
& Akcil-Okan, O. (0)
-
- Filter by Editor
-
-
& Spizer, S. M. (0)
-
& . Spizer, S. (0)
-
& Ahn, J. (0)
-
& Bateiha, S. (0)
-
& Bosch, N. (0)
-
& Brennan K. (0)
-
& Brennan, K. (0)
-
& Chen, B. (0)
-
& Chen, Bodong (0)
-
& Drown, S. (0)
-
& Ferretti, F. (0)
-
& Higgins, A. (0)
-
& J. Peters (0)
-
& Kali, Y. (0)
-
& Ruiz-Arias, P.M. (0)
-
& S. Spitzer (0)
-
& Spitzer, S. (0)
-
& Spitzer, S.M. (0)
-
(submitted - in Review for IEEE ICASSP-2024) (0)
-
- (0)
-
-
Have feedback or suggestions for a way to improve these results?
!
Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher.
Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?
Some links on this page may take you to non-federal websites. Their policies may differ from this site.
-
Reshchikov, M. A. ; Andrieiev, O. ; Vorobiov, M. ; Ye, D. ; Demchenko, D. O. ; Sierakowski, K. ; Bockowski, M. ; McEwen, B. ; Meyers, V. ; Shahedipour-Sandvik, F. ( , Journal of Applied Physics)
GaN samples were implanted with Be and annealed in different conditions in order to activate the shallow BeGaacceptor. Low-temperature photoluminescence spectra were studied to find BeGa-related defects in the implanted samples. A yellow band with a maximum at about 2.2 eV (the YLBeband) was observed in nearly all samples protected with an AlN cap during the annealing and in samples annealed under ultrahigh N2pressure. A green band with a maximum at 2.35 eV (the GL2 band), attributed to the nitrogen vacancy, was the dominant defect-related luminescence band in GaN samples annealed without a protective AlN layer. The ultraviolet luminescence (UVLBe) band with a maximum at 3.38 eV attributed to the shallow BeGaacceptor with the ionization energy of 0.113 eV appeared in implanted samples only after annealing at high temperatures and ultrahigh N2pressure. This is the first observation of the UVLBeband in Be-implanted GaN, indicating successful activation of the BeGaacceptor.